کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674585 1008966 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy
چکیده انگلیسی

β-Ga2O3 thin films were grown on (100)-oriented β-Ga2O3 single crystal substrates by plasma-assisted molecular beam epitaxy. At the growth temperature over 800 °C and the Ga beam equivalent pressure of 1.1 × 10− 7 Torr, the grown surfaces exhibited clear step and terrace structures and the root-mean-square roughness of 0.5 nm in atomic force microscopy. The successful step-flow growth is indebted to the strong cleavableness of (100) planes of β-Ga2O3. The off-axis direction, determined by the initial substrate polishing stage, significantly influences on the surface morphology, and it should be along [001] or [00-1] directions in order for smooth surfaces.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5768–5771
نویسندگان
, , , , ,