کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674604 | 1008966 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on early stages of film growth for Sn doped In2O3 films deposited at various substrate temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Effects of the substrate temperature on early stages of film growth were investigated for tin-doped indium oxide (ITO) films deposited on alkali-free glass substrates by dc magnetron sputtering. The variations in sheet resistance, film coverage and average surface roughness showed clearly that ITO films deposited on the unheated glass (lower than 50 °C) formed by a Volmer–Weber growth mode. In contrast, such an island structure was not clearly observed for films deposited on glass substrates heated at 100, 200 and 400 °C, resulting in better film coverage. These results indicate that the nucleation densities of ITO films increase dramatically with increasing substrate temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5868–5871
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5868–5871
نویسندگان
Yasushi Sato, Mikihiro Taketomo, Norihiro Ito, Yuzo Shigesato,