کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674628 1518091 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx+ ions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx+ ions
چکیده انگلیسی

To improve the thermal stability of Mo/Si multilayers, a novel method to form carbide based diffusion barriers, produced by the implantation of Si with CHx+ ions, has been developed. The multilayers were grown by e-beam evaporation, while CHx+ ions were implanted at the Mo/Si interfaces, using a Kaufman ion source with a Ne / CH4 gas mixture. Energies were varied from 300 to 1000 eV. The growth as well as the implantation procedure were monitored by in situ X-ray reflectometry. Auger Electron Spectroscopy was used to characterize the surface composition before and after CHx+ ion implantation. The shift of the Si LVV Auger peak revealed the formation of SiC. Ex situ X-ray reflectometry showed a thermal stability of both the reflectivity and the multilayer period up to 430 K.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 510, Issues 1–2, 3 July 2006, Pages 26–31
نویسندگان
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