Growth of polycrystalline InP thin films by the pulsed laser deposition technique

The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are shown. X-ray diffraction shows that the stoichiometric InP films were face-centered cubic with preferred orientation of the crystallites over the (111) plane and mean grain size of about 60 nm. We also discuss the consequences of adverse growth conditions as bad vacuum and high substrate temperature on the film stoichiometry.