Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

We have grown indium oxide thin films on silicon substrates at low temperature by metal organic chemical vapor deposition. Polycrystalline film growth could only be obtained at temperatures below 400 °C. Above 400 °C, metallic indium deposition dominated. We have investigated the effect of substrate temperature and reactor pressure on the film growth and structural properties in the range of 250–350 °C and 5 ⁎ 103–4 ⁎ 104 Pa. The film grown at 300 °C exhibited a resistivity of about 3.6 × 10− 3 Ω cm and a maximal optical transmittance of more than 95% in the visible range. The film showed an optical band gap of about 3.6 eV.