کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674765 | 1008970 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Functionalized interfaces by plasma treatments on silicon and silicon dioxide substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Functionalized interfaces by plasma treatments on silicon and silicon dioxide substrates Functionalized interfaces by plasma treatments on silicon and silicon dioxide substrates](/preview/png/1674765.png)
چکیده انگلیسی
Plasma-enhanced chemical vapour deposition has been applied to the fabrication of high-quality SiO2/Si interfaces and to the functionalization of the silicon dioxide surfaces for organic thin film transistor applications. The advantage of the method herein reported resides in the possibility of activating the substrate, depositing and functionalizing high-quality SiO2 films in a single-run process, at low temperature. The structural properties of silicon dioxide samples have been studied by infrared spectroscopy, angle resolved and depth profiling X-ray photoelectron spectroscopy. The electronic properties have been retrieved from the leakage current values and the Fowler–Nordheim current plots.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 18, 25 June 2007, Pages 7195–7202
Journal: Thin Solid Films - Volume 515, Issue 18, 25 June 2007, Pages 7195–7202
نویسندگان
C. Di Franco, N. Cioffi, N. Ditaranto, M.S. Vitiello, M. Sibilano, L. Torsi, G. Scamarcio,