کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1674811 | 1518118 | 2005 | 5 صفحه PDF | دانلود رایگان |

Investigations on how to replace the toxic KCN etching for the removal of Cu–S phases during the preparation of CuInS2 (CIS) absorber layers by electrochemical procedures are presented. Starting from a simple anodic treatment in V2+/V3+ electrolyte, a more complex photoelectrochemical technique is developed which consists of different consecutive etching steps for the dissolution of the predominant CuS and for the removal of remaining Cu2S and a small sacrificial layer of CuInS2. This new method also offers the possibility of in situ quality control of the CIS in a photoelectrochemical solar cell (PECS) setup. Further examination of the treated films is carried out using X-ray emission spectroscopy, X-ray photoelectron spectroscopy (XPS) and by further processing of the samples to create solid state solar cells.The specimen yield conversion efficiencies of 3.3% in PECS and 8% in solid state devices.
Journal: Thin Solid Films - Volumes 480–481, 1 June 2005, Pages 24–28