کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674867 1518118 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of the diode ideality factor in CuInS2-on-Cu-tape solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Temperature dependence of the diode ideality factor in CuInS2-on-Cu-tape solar cells
چکیده انگلیسی

Current versus voltage measurements were done on copper indium disulphide cells fabricated on a continuous copper tape fabricated at IST (Frankfurt/Oder, D). Temperatures were in the range of 90–370 K. We compared the measurements with an ideal diode model and extracted parameters accordingly. The temperature dependence of the diode ideality factor can give valuable information about the main recombination mechanism in the cell. We find a remarkable agreement of the temperature dependence with a theory derived by Padovani et al. We conclude that tunneling currents play an important role inside the cell.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volumes 480–481, 1 June 2005, Pages 307–311
نویسندگان
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