Photosensitivity of p,n-Si/n-Cd1−xZnxS heterojunctions manufactured by a method of electrochemical deposition

A simple and economical electrodeposition technique for manufacturing of p,n-Si/n-Cd1−xZnxS (0≤x≤0.8) heterojunctions is presented. Electrical and photoelectrical measurements have been carried out on p,n-Si/n-Cd1−xZnxS heterojunctions having varying Cd1−xZnxS films composition x, heat treatment temperature and time. It is found that upon heat treatment in air at 350–400 °C for 7–8 min, the heterojunctions with x=0.7 exhibit high photosensitivity over a wide spectral region (λ=0.39÷1.3 μm). Under AM 1.5 conditions the open circuit photovoltage, short circuit photocurrent density for heterojunctions n-Si/Cd0.3Zn0.7S were Vocn=0.49 V, Jscn=15.1 mA/cm2, and for heterojunctions p-Si/Cd0.3Zn0.7S were Vocp=0.62 V, Jscp=21.75 mA/cm2, respectively.