کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674989 | 1008972 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and dielectric properties of BaTiO3 thin films prepared by the microwave-hydrothermal method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and dielectric properties of BaTiO3 thin films prepared by the microwave-hydrothermal method Growth and dielectric properties of BaTiO3 thin films prepared by the microwave-hydrothermal method](/preview/png/1674989.png)
چکیده انگلیسی
Polycrystalline BaTiO3 thin films were grown on Ti-covered polymer substrates at 80 °C using the microwave-hydrothermal technique. Onset of BaTiO3 formation occurred almost instantaneously at 80 °C and complete film coverage was achieved within 2 min. Longer reaction time was necessary for extensive grain growth to achieve dense films. Good quality capacitor films were only achieved at 4 h reaction time but loss tangents were high. Film dielectric constant and dielectric loss values of as-grown M-H films decreased with longer reaction time. Oxygen plasma treatment improved loss tangents to 4% by removal of both absorbed moisture and lattice hydroxyls.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5545–5550
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5545–5550
نویسندگان
C.K. Tan, G.K.L. Goh, G.K. Lau,