کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674992 | 1008972 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5562-5566
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5562-5566
نویسندگان
Dong Chan Kim, Bo Hyun Kong, Sang Ouk Jun, Hyung Koun Cho, Dong Jun Park, Jeong Yong Lee,