The large modification of phase transition characteristics of VO2 films on SiO2/Si substrates

The vanadium oxide (VO2) films have been prepared on SiO2/Si substrates by using a modified Ion Beam Enhanced Deposition (IBED) method. During the film deposition, high doses of Ar+ and H+ ions have been implanted into the deposited films from the implanted beam. The resistance change of the VO2 films with temperature has been measured and the phase transition process has been observed by using the X-ray Diffraction technique. The phase transition of the IBED VO2 films starts at a low temperature of 48 °C and ends at a high temperature of 78 °C. It is found that the phase transition characteristics can be adjusted by changing the annealing temperature or the time and the phase transition characteristics of the IBED VO2 films depend on the quantity and location of argon atoms in the film matrix.