کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675044 | 1008973 | 2006 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth of diborides thin films on different substrates by pulsed laser ablation Growth of diborides thin films on different substrates by pulsed laser ablation](/preview/png/1675044.png)
The growth of scandium, titanium and zirconium diborides thin films by pulsed laser ablation technique on different substrates has been studied. In situ reflection high energy electron diffraction and ex situ X-ray diffraction analyses indicate that the films are strongly c-axis oriented on all the substrates and also epitaxial, apart from Si(111), where the in plane orientation is poor. Atomic force microscopy imaging reveals a flat surface in all the epitaxial samples, with roughness lower than 1 nm. The results on silicon carbide and sapphire are very promising for using these materials as buffer layers in magnesium diboride thin films growth, especially to improve epitaxy and to prevent oxygen diffusion from the substrate, and also to study the influence of lattice strain on MgB2 critical temperature.
Journal: Thin Solid Films - Volume 515, Issue 4, 5 December 2006, Pages 1439–1444