کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675137 | 1518092 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Incoherent ellipsometry below energy gap of TlInS2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
The layered material TlInS2 was studied by spectroscopic phase modulated ellipsometry in the energy range 0.75-2.00 eV at room temperature. By using an incoherent reflection model and assuming that optic axis (c*) of TlInS2 is normal to the layer plane, the refractive indices in E // c* and E â¥Â c* orientations of the electrical vector, E, of the incident light were obtained for a region of photon energies below the energy gap of this material. A remarkable increase of the birefringence at photon energies approaching energy gap (2.4 eV) was observed to be a good illustration of the fact that band gap exciton transitions in TlInS2 at room temperature are allowed in E // c* and forbidden in E â¥Â c* orientation, respectively. It is shown that biaxial effects in TlInS2 are small and sample-dependent.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 509, Issues 1â2, 19 June 2006, Pages 137-140
Journal: Thin Solid Films - Volume 509, Issues 1â2, 19 June 2006, Pages 137-140
نویسندگان
Yonggu Shim, Wataru Okada, Nazim Mamedov,