کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675137 1518092 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Incoherent ellipsometry below energy gap of TlInS2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Incoherent ellipsometry below energy gap of TlInS2
چکیده انگلیسی
The layered material TlInS2 was studied by spectroscopic phase modulated ellipsometry in the energy range 0.75-2.00 eV at room temperature. By using an incoherent reflection model and assuming that optic axis (c*) of TlInS2 is normal to the layer plane, the refractive indices in E // c* and E ⊥ c* orientations of the electrical vector, E, of the incident light were obtained for a region of photon energies below the energy gap of this material. A remarkable increase of the birefringence at photon energies approaching energy gap (2.4 eV) was observed to be a good illustration of the fact that band gap exciton transitions in TlInS2 at room temperature are allowed in E // c* and forbidden in E ⊥ c* orientation, respectively. It is shown that biaxial effects in TlInS2 are small and sample-dependent.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 509, Issues 1–2, 19 June 2006, Pages 137-140
نویسندگان
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