Electron transport in single and multicomponent n-type oxide semiconductors

The electron transport in n-type polycrystalline zinc oxide, nanocrystalline Zinc-Gallium–Oxygen and amorphous Indium–Zinc–Oxygen systems produced by rf magnetron sputtering at room temperature, under different oxygen partial pressure were investigated. It was found that the carrier transport is not band tail limited, being governed by metal cations irrespective to the film's structure. The highest net room temperature electron mobility was achieved on the amorphous films and noticed that for the single component oxides the mobility decreases as the carrier concentration increases, while the reverse behaviour was observed for the multicomponent oxides, independently of their structure. These behaviours are related to the role that negative charge defects in excess of 1010 cm− 2 generated on multicomponent oxides have on carriers scattering and so on their electronic performances.