کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675328 | 1518096 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Erbium silicidation on SiGe for advanced MOS application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Erbium silicidation on SiGe for advanced MOS application Erbium silicidation on SiGe for advanced MOS application](/preview/png/1675328.png)
چکیده انگلیسی
Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1−xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1−yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1−xGex samples especially after annealing at 600 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 91–94
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 91–94
نویسندگان
Q.F. Daphne Yiew, Y. Setiawan, P.S. Lee, D.Z. Chi,