کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675335 | 1518096 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Prediction of the final dopant positions after ion implantation has always been strongly influenced by the choice of stopping models. A molecular dynamics (MD) method is used in this work; the nuclear stopping is treated by accurate pair potentials calculated by density functional theory (DFT). The slowing down due to collisions with electrons will be described by both a non-local semi-empirical model and a local model based on Fermi level phase shift factors. Comparisons with experimental data using both models show that a local pair-specific electronic stopping model is essential in accurately predicting range profiles for any element even at low implant energies where nuclear effects are dominant.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 121–125
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 121–125
نویسندگان
H.Y. Chan, K. Nordlund, H.-J.L. Gossmann, M. Harris, N.J. Montgomery, C.P.A. Mulcahy, S. Biswas, M.P. Srinivasan, F. Benistant, C.M. Ng, Lap Chan,