Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon

Prediction of the final dopant positions after ion implantation has always been strongly influenced by the choice of stopping models. A molecular dynamics (MD) method is used in this work; the nuclear stopping is treated by accurate pair potentials calculated by density functional theory (DFT). The slowing down due to collisions with electrons will be described by both a non-local semi-empirical model and a local model based on Fermi level phase shift factors. Comparisons with experimental data using both models show that a local pair-specific electronic stopping model is essential in accurately predicting range profiles for any element even at low implant energies where nuclear effects are dominant.