کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675351 | 1518096 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface control in the laser MBE growth of hafnium oxide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-k hafnium oxide thin films were deposited on p-type (100) silicon substrate by laser molecular beam epitaxy (LMBE) technique, and these ultrathin gate dielectric films were characterized by Auger electron spectroscopy (AES), capacitance-voltage (C-V) and current-voltage (I-V) measurements. In order to take full advantages of high dielectric constant of HfO2, the growth of low dielectric constant interfacial layer must be controlled as thin as possible in the deposition process under optimized conditions. The effect of the critical factor of oxygen partial pressure was studied in the range of 2 Ã 10â 3 to 7 Ã 10â 6 Torr while keeping other experimental parameters constant. It was found that by lowering down the oxygen partial pressure to an optimized level, the growth of the low-k interfacial layer was effectively suppressed. A two-step deposition method was adopted to further reduce the thickness of this interfacial layer. The interfacial reaction was better controlled by using this two-step deposition method, resulting in high quality ultrathin HfO2 films on Si with desired and improved dielectric properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1â2, 10 May 2006, Pages 188-191
Journal: Thin Solid Films - Volume 504, Issues 1â2, 10 May 2006, Pages 188-191
نویسندگان
Y.K. Lu, W. Zhu, X.F. Chen, R. Gopalkrishnan,