کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675367 | 1518096 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A method of fabricating metal-insulator-metal (MIM) capacitor in Cu/low-k backend interconnection process for RF application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A method of fabricating metal-insulator-metal (MIM) capacitor in Cu/low-k backend interconnection process for RF application A method of fabricating metal-insulator-metal (MIM) capacitor in Cu/low-k backend interconnection process for RF application](/preview/png/1675367.png)
چکیده انگلیسی
To build Cu and low-k dielectric integrated MIM capacitor on standard CMOS silicon substrate for RFIC application, a Ta layer under the capacitor upper plate is necessary for preventing Cu diffusion into Si3N4 dielectric layer of capacitor. In the experiment, delamination was found after 1000 Å Ta film deposition on top of Si3N4. SEM inspection revealed that the delamination occurred at the interface between BD and Si3N4. The Ta/Si3N4 delamination was solved by inserting a SiO2 layer between BD and Si3N4 layers to compensate the stress difference between the BD and Si3N4/Ta stack films. Full process technology based on Cu and low-k process line for integrating passive device on silicon substrate was thus successfully developed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 257–260
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 257–260
نویسندگان
M.B. Yu, Jiang Ning, S. Balakumar, V.N. Bliznetsov, G.Q. Lo, N. Balasubramanian, D.L. Kwong,