کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675416 | 1008979 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determining indices of refraction for ThO2 thin films sputtered under different bias voltages from 1.2 to 6.5 eV by spectroscopic ellipsometry
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Determining indices of refraction for ThO2 thin films sputtered under different bias voltages from 1.2 to 6.5 eV by spectroscopic ellipsometry Determining indices of refraction for ThO2 thin films sputtered under different bias voltages from 1.2 to 6.5 eV by spectroscopic ellipsometry](/preview/png/1675416.png)
چکیده انگلیسی
We used spectroscopic ellipsometry to determine the optical constants of seven ThO2 thin-film samples, thickness ranging between 28 and 578 nm, for the spectral range of 1.2 to 6.5 eV. The samples were deposited by biased radio-frequency sputtering at DC bias voltages between 0 and − 68 V. The index of refraction, n, does not depend on bias voltage, sputter pressure, deposition rate, or thickness. Specifically, the value of n at 3 eV is 1.86 ± 0.04 for the unbiased samples and 1.86 ± 0.04 for the biased samples. The average value of n at 3 eV for the thicker samples (d ≥ 50 nm) was 1.87 ± 0.05, and 1.85 ± 0.02 for the thinner samples (d ≤ 50 nm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 3, 23 November 2006, Pages 847–853
Journal: Thin Solid Films - Volume 515, Issue 3, 23 November 2006, Pages 847–853
نویسندگان
William R. Evans, David D. Allred,