Electrical, luminescent and photovoltaic properties of the indium tin oxide–GaSe heterojunctions with a thin layer of gallium oxide

The influence of the thickness of gallium oxide buffer layer onto electrical, photovoltaic and luminescent properties of ITO (indium tin oxide)–GaSe heterojunctions is investigated. It is established that introducing a Ga2O3 layer with a thickness up to 5–6 nm to the ITO–GaSe heterojunctions leads to changing charge transfer mechanisms; to increasing the open-circuit voltage Voc more that twice (thus the situation when Voc considerably exceeds the built-in potential is realized); to increasing of electroluminescence intensity more, than by an order of magnitude; and also to increasing solar efficiency more than twice in comparison with structures, in which a gallium oxide layer was not grown intentionally.