کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675525 | 1008980 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics](/preview/png/1675525.png)
چکیده انگلیسی
Atomic layer deposition was applied to fabricate metal oxide films on planar substrates and also in deep trenches with appreciable step coverage. Atomic layer deposition of Ru electrodes was realized on planar substrates. Electrical and structural behaviour of HfO2–TiO2 and Al2O3–TiO2 nanolaminates and mixtures as well as Al2O3 films were evaluated. The lowest leakage current densities with the lowest equivalent oxide thickness were achieved in mixed Al2O3–TiO2 films annealed at 700 °C, compared to all other films in as-deposited state as well as annealed at 900 °C. The highest permittivities in this study were measured on HfO2–TiO2 nanolaminates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 16, 4 June 2007, Pages 6447–6451
Journal: Thin Solid Films - Volume 515, Issue 16, 4 June 2007, Pages 6447–6451
نویسندگان
Kaupo Kukli, Mikko Ritala, Markku Leskelä, Jonas Sundqvist, Lars Oberbeck, Johannes Heitmann, Uwe Schröder, Jaan Aarik, Aleks Aidla,