کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675577 | 1008982 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1âxGex and Si1âyCy buffer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1âxGex and Si1âyCy buffer layers Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1âxGex and Si1âyCy buffer layers](/preview/png/1675577.png)
چکیده انگلیسی
The structural and electrical properties of La0.75Sr0.25MnO3 (LSMO) film on Bi4Ti3O12 (BTO)/CeO2/YSZ buffered Si1âxGex/Si (0.05 â¤Â x â¤Â 0.2 for compressive strain), blank Si, and Si1âyCy/Si (y = 0.01 for tensile) were studied. X-ray high resolution reciprocal lattice mapping (HRRLM) and atomic force microscopy (AFM) show that structural properties of LSMO and buffer oxide layers are strongly related to the strain induced by amount of Ge and C contents. The RMS roughness of LSMO on Si1âxGex/Si has a tendency to increase with increasing of Ge content. Electrical properties of LSMO film with Ge content up to 10% are slightly improved compared to blank Si whereas higher resistivity values were obtained for the samples with higher Ge content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 411-415
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 411-415
نویسندگان
Joo-Hyung Kim, Alexander M. Grishin, Henry H. Radamson,