کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675668 1008982 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Calculations of optical properties in p-doped nitrides quaternary alloys multiple quantum wells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Calculations of optical properties in p-doped nitrides quaternary alloys multiple quantum wells
چکیده انگلیسی

We present theoretical photoluminescence (PL) and absorption spectra of p-doped InGaN/AlInGaN and AlInGaN/InGaN multiple quantum wells (MQWs). The calculations were performed within the k.p method by means of solving a full eight-band Kane Hamiltonian together with the Poisson equation in a plane wave representation, including exchange–correlation effects within the local density approximation. Strain effects due to the lattice mismatch and an internal electric field are also taken into account. We show that by changing the In and Al composition we can reach short and long emission wavelengths. The trends in the calculated Stokes shift, due to many-body effects within the quasi-two-dimensional hole gas (2DHG), are analyzed as a function of the acceptor doping concentration. Since the studies of optical properties of quantum wells based on nitrides quaternary alloys are at an early stage, the results reported here will provide guidelines for the interpretation of forthcoming experiments.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 782–785
نویسندگان
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