کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675677 1518103 2006 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films
چکیده انگلیسی

Silicon carbonitride (Si:C:N) films were produced by remote microwave nitrogen plasma chemical vapor deposition (RP-CVD) using a 1,1,3,3-tetramethyldisilazane precursor. The reactivity the precursor with atomic nitrogen was characterized using hexamethyldisilazane as a model compound. The effect of the substrate temperature (TS) on the kinetics of the RP-CVD process, chemical composition, structure, and surface morphology of resulting film has been investigated. The temperature dependencies of the mass- and thickness-based film growth rate imply that for low substrate temperature range (TS = 30–200 °C) film growth is limited by desorption of film-forming precursors, whereas in high substrate temperature range (TS = 200–400 °C) film growth is independent of the temperature and the rate of RP-CVD is mass-transport limited. The increase of the substrate temperature from 30 to 400 °C causes the elimination of organic moieties from the film and the formation of Si–N and Si–C network structure. The hypothetical chemical reactions contributing to film formation are discussed. The films were found to be morphologically homogeneous materials exhibiting very small surface roughness for higher substrate temperatures (TS = 200–400 °C).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 497, Issues 1–2, 21 February 2006, Pages 24–34
نویسندگان
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