کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675697 | 1518103 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition](/preview/png/1675697.png)
چکیده انگلیسی
In this paper, about 30 μm thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p++-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 °C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in grain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cmâ 2 magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 497, Issues 1â2, 21 February 2006, Pages 157-162
Journal: Thin Solid Films - Volume 497, Issues 1â2, 21 February 2006, Pages 157-162
نویسندگان
Bin Ai, Hui Shen, Zongcun Liang, Zhi Chen, Guanglin Kong, Xianbo Liao,