Temperature-dependant growth of PbTe pulsed laser deposited films on various substrates

Thin films of PbTe were grown on various substrates (glass, Si(100), Si(111), BaF2(111)) using pulsed laser deposition. The growth temperature was varied from 90 to 300 °C. Morphological and structural analyses have been performed by atomic force microscopy, X-ray diffraction and transmission electron microscopy. The composition transfer from target to substrate has also been considered through electron probe micro-analysis and secondary ion mass spectroscopy. Strong influence of both parameters, nature of the substrate and deposition temperature, on the film growth and film quality has been evidenced.