کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675745 | 1008984 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing](/preview/png/1675745.png)
LaNiO3 (LNO) thin films were deposited by radio frequency magnetron sputtering on n-type Si (100) wafers at room temperature (RT). The as-sputtered LNO thin films were amorphous and had very high RT electrical resistivity even after post-annealing at 800 °C. The amorphous as-sputtered LNO films could be transformed to polycrystalline LNO films in rhombohedral phase by heating at 400 °C in an O2 atmosphere at pressure ranging from 1.5 to 8.0 MPa. Very low RT resistivity of LNO films were obtained by this high oxygen-pressure processing. The lowest value was as low as 1.09 × 10− 4 Ω cm by processing at oxygen pressure of 8 MPa. Such preparation of LNO thin films is compatible with the Si-based readout integrated circuits. Highly (100)-oriented perovskite structure of Pb(Zr0.52Ti0.48)O3 thin films was formed on this rhombohedral phase LNO, and good ferroelectricity could also be obtained on these HOPP-processed rhombohedral phase LNO films.
Journal: Thin Solid Films - Volume 516, Issue 6, 30 January 2008, Pages 919–924