Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode

An Al/Methyl Red/p-Si sandwich Schottky barrier diode (SBD) has been fabricated by adding a solution of the organic compound Methyl Red in chloroform onto a p-Si substrate, and then evaporating the solvent. Current–voltage (I–V) measurements of the Al/Methyl Red/p-Si sandwich SBD have been carried out at room temperature and in the dark. The Al/Methyl Red/p-Si sandwich SBD demonstrated rectifying behavior. Barrier height (BH) and ideality factor values of 0.855 eV and 1.19, respectively, for this device have been determined from the forward-bias I–V characteristics. The Al/Methyl Red/p-Si sandwich SBD showed non-ideal I–V behavior with the value of ideality factor greater than unity. The energy distribution of the interface state density determined from I–V characteristics increases exponentially with bias from 3.68 × 1012 cm− 2 eV− 1 at (0.81 − Ev) eV to 9.99 × 1013 cm− 2 eV− 1 at (0.69 − Ev) eV.