کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675829 | 1008985 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ investigation of the selenization kinetics of Cu–Ga precursors using time-resolved high-temperature X-ray diffraction
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu–Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of CuGaSe2 occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu–Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (± 7) kJ/mol.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 15, 31 May 2007, Pages 5837–5842
Journal: Thin Solid Films - Volume 515, Issue 15, 31 May 2007, Pages 5837–5842
نویسندگان
W.K. Kim, E.A. Payzant, T.J. Anderson, O.D. Crisalle,