کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675894 1008985 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Metastabilities in the electrical characteristics of CIGS devices: Experimental results vs theoretical predictions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Metastabilities in the electrical characteristics of CIGS devices: Experimental results vs theoretical predictions
چکیده انگلیسی

Recent theoretical calculations have traced an origin of light- and voltage bias-induced metastabilities in Cu(In,Ga)Se2-based solar cells to negative-U properties of the VSe–VCu complex. In this paper we compare experimental findings with theoretically predicted properties of these defects and calculated values of parameters characteristic for transitions between their different states. Profiles of net acceptor concentrations in the relaxed and metastable states obtained by capacitance profiling have been studied, as well as annealing kinetics of the persistent defect distributions by thermally stimulated capacitance and conductivity. Good qualitative and quantitative agreement are found between theory of VSe-related defects and experimental results. The consequences from the point of view of photovoltaic efficiency of the Cu(In,Ga)Se2-based solar cells are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 15, 31 May 2007, Pages 6142–6146
نویسندگان
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