کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675982 1518089 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theoretical study of current transfer in thin variable-gap p-n structures with Ohmic contacts
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Theoretical study of current transfer in thin variable-gap p-n structures with Ohmic contacts
چکیده انگلیسی
The paper theoretically investigates the carrier transport in a thin variable-gap p-n structure in which the band gap linearly increases from the structure's interface towards Ohmic contacts. The peculiarities of minority carrier redistribution taking place in the base regions for both directions of the current are established. The influence of band-gap grading on the direct and reverse branches of current-voltage characteristics, particularly, on formation of a portion with negative differential resistance at the reverse bias is discussed. The results of calculations are illustrated for a variable-gap p-n structure based on HgCdTe solid solution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 513, Issues 1–2, 14 August 2006, Pages 43-46
نویسندگان
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