کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675984 1518089 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Indium sulfide thin films deposited by the spray ion layer gas reaction technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Indium sulfide thin films deposited by the spray ion layer gas reaction technique
چکیده انگلیسی

The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 513, Issues 1–2, 14 August 2006, Pages 52–56
نویسندگان
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