کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675996 | 1518089 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The growth of single cubic phase ZnS thin films on silica glass by plasma-assisted metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The growth of single cubic phase ZnS thin films on silica glass by plasma-assisted metalorganic chemical vapor deposition The growth of single cubic phase ZnS thin films on silica glass by plasma-assisted metalorganic chemical vapor deposition](/preview/png/1675996.png)
چکیده انگلیسی
In this work, ZnS thin films with single-phase zinc blende structure were fabricated on silica glass substrates by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD). Dimethyl zinc and hydrogen sulfide were used as the precursors. The films were characterized using X-ray diffraction and photoluminescence spectroscopy. The optimal temperature for ZnS growth, 350 °C, was confirmed via a series of growth at different temperatures. In order to obtain stoichiometric ZnS films using PA-MOCVD, larger VI / II gas flow ratios was needed than the one used without plasma assistance. The reason for this phenomenon is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 513, Issues 1–2, 14 August 2006, Pages 114–117
Journal: Thin Solid Films - Volume 513, Issues 1–2, 14 August 2006, Pages 114–117
نویسندگان
Z.Z. Zhang, D.Z. Shen, J.Y. Zhang, C.X. Shan, Y.M. Lu, Y.C. Liu, B.H. Li, D.X. Zhao, B. Yao, X.W. Fan,