کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676027 1518089 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates
چکیده انگلیسی

We discuss a method for fabricating strained Si layers via deposition directly onto planarized relaxed SiGe virtual substrates, a process termed direct regrowth (DRG). We show that a trade-off exists between surface roughness and cleanliness of the Si/SiGe interface. Using this knowledge, we discuss process requirements to ensure that strained Si wafers produced via direct regrowth are free of interfacial contamination, exhibit ultra-low surface roughness, and feature abrupt Si/SiGe interfacial transitions. Finally, we show that metal-oxide-semiconductor field-effect transistors produced on strained Si channels fabricated via direct regrowth exhibit excellent device performance, suggesting the viability of the DRG process for manufacture of high quality strained Si wafers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 513, Issues 1–2, 14 August 2006, Pages 300–306
نویسندگان
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