کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676035 | 1518089 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Polycrystalline silicon (poly-Si) thin-films are made on planar and textured glass substrates by solid phase crystallization (SPC) of in situ doped amorphous silicon (a-Si) deposited by electron-beam evaporation. These materials are referred to by us as EVA materials (SPC of evaporated a-Si). The properties of EVA poly-Si films are characterised by Raman microscopy, transmission electron microscopy, and X-ray diffraction. A narrow and symmetrical Raman peak at a wave number of about 520 cmâ 1 is observed for all samples, showing that the films are fully crystallized. X-ray diffraction (XRD) reveals that the films are preferentially (111)-oriented. Furthermore, the full width at half maximum of the dominant (111) XRD peaks indicates that the structural quality of the films is affected by the a-Si deposition temperature and the surface morphology of the glass substrates. A-Si deposition at 200 instead of 400 °C leads to an enhanced poly-Si grain size. On textured glass, the addition of a SiN barrier layer between the glass and the Si improves the poly-Si material quality. No such effect occurs on planar glass. Mesa-type solar cells are made from these EVA films on planar and textured glass. A strong correlation between the cells' current-voltage characteristics and their crystalline material quality is observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 513, Issues 1â2, 14 August 2006, Pages 356-363
Journal: Thin Solid Films - Volume 513, Issues 1â2, 14 August 2006, Pages 356-363
نویسندگان
Dengyuan Song, Daniel Inns, Axel Straub, Mason L. Terry, Patrick Campbell, Armin G. Aberle,