The mechanism of alumina formation from TMA and molecular oxygen using Catalytic-CVD with a tungsten catalyzer

The mechanism of alumina formation from tri-methyl aluminum and oxygen (O2) using catalytic-chemical vapor deposition with a tungsten catalyzer was investigated using quadrupole mass spectrometry. Above 500 °C, the tungsten catalyzer allowed Al to separate from TMA. The decrease in O2 and alumina film growth all occurred at 500 °C. From these results, it was concluded that the Al, derived from the decomposition of TMA, reacted with O2 to produce AlO via a vapor phase chemical reaction. The alumina films can be deposited onto Si wafers at low substrate temperatures including room temperature.