کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676169 1518099 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystallization of HWCVD amorphous silicon thin films at elevated temperatures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Crystallization of HWCVD amorphous silicon thin films at elevated temperatures
چکیده انگلیسی

Hot-wire chemical vapour deposition (HWCVD) has been used to prepare both hydrogenated amorphous silicon (a-Si:H) and nano/microcrystalline thin layers as intrinsic material at different deposition conditions, in order to establish optimum conditions where the hydrogen content would be minimal and the films would still exhibit good optical properties. Experimental data shows that by varying deposition conditions the transition to the nano/microcrystalline phase can be achieved. Transitional films in the regime tending towards the crystalline phase showed no infrared-active hydrogen. XRD analysis failed to show any discernible crystalline peaks, while Raman spectroscopy as a tool is more promising for the identification of films in changeover to the nano/microcrystalline state.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 98–101
نویسندگان
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