کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676176 1518099 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of metastabilities in microcrystalline silicon films by photoconductivity techniques
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Study of metastabilities in microcrystalline silicon films by photoconductivity techniques
چکیده انگلیسی

We present a characterisation of the photoelectronic properties of a series of microcrystalline silicon samples which were deposited by hot-wire chemical vapour deposition and had a range of crystallinity from high-crystalline volume fraction to amorphous nature. Samples were characterised by dark and photocurrent measurements and by application of the steady-state photocarrier grating technique. Similarities exist for the temperature-dependent photoconductivity between microcrystalline silicon and hydrogenated amorphous silicon samples with respect to the observation of thermal quenching on the one hand side and its absence for samples, more n-type in character, on the other hand side. The minority carrier diffusion length of the microcrystalline samples does hardly change with temperature which indicates a steeper distribution of valence band tail states. We also cover metastability issues with respect to changes in the conductive properties upon light-induced degradation and exposure to air or water.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 129–132
نویسندگان
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