کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676193 1518099 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deposition of photosensitive hydrogenated amorphous silicon–germanium films with a tantalum hot wire
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Deposition of photosensitive hydrogenated amorphous silicon–germanium films with a tantalum hot wire
چکیده انگلیسی

We study the optical, electrical and structural properties of a-SiGe:H thin films deposited by hot-wire chemical vapor deposition (HWCVD). The best films are deposited with a Ta filament heated to 1750 °C and the substrate temperature held at 200 °C. For the same precursor gas ratio of GeH4 to SiH4, a lower filament temperature produces films with higher Ge incorporation than with a higher filament temperature. For Tauc band gaps between 1.22 and 1.30 eV, the photoconductivity and photosensitivity are significantly higher than for plasma-enhanced CVD a-SiGe:H films exhibiting the same band gap. The filament lifetime is much longer for a Ta filament than for a W filament at these operating temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 198–201
نویسندگان
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