کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676206 1518099 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tandem and triple junction silicon thin film solar cells with intrinsic layers prepared by hot-wire CVD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Tandem and triple junction silicon thin film solar cells with intrinsic layers prepared by hot-wire CVD
چکیده انگلیسی

Hot-wire CVD (HWCVD) can be applied for the deposition of various types of silicon films. At Utrecht University intrinsic layers of high optoelectronic quality have been successfully used as the absorber layers in thin film solar cells. This paper presents results for a proto-Si/μc-Si cell and a proto-Si/μc-Si/μc-Si triple junction cell with its μc–μc middle-bottom tandem cell, all deposited in nip configuration onto plain stainless steel. The proto-Si/μc-Si tandem had a good Voc of 1.38 V and a high FF of 0.75. Its efficiency of 7.3% was, considering the absence of a back reflector, adequate. The μc–μc tandem cell had a good Voc of 1.04 V and a very high FF of 0.77. Since both tandem cells were current-limited by the bottom cell, the high FF-values indicate that our μc-Si material is of very high quality. The triple cell had a lower FF of 0.69 and its Voc of 1.77 V was lower than the sum of the middle–bottom tandem and the top cell. Filtered light-IV measurements on the μc–μc tandem cell indicated that the losses in FF and Voc observed for the triple cell are, at least partly, a result of the optical absorption by the proto-Si top cell.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 256–259
نویسندگان
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