کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676232 1518099 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of SiH4 adsorption on H/Si(100) surfaces
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Simulation of SiH4 adsorption on H/Si(100) surfaces
چکیده انگلیسی

Using quantum-chemical calculations, we have studied the adsorption mechanism, geometry and energy states of silane on H/Si(100) surfaces (with a monohydride phase). Adsorption can take place both with and without dimer bond rupture. As a result of the calculations, it has been established that adsorption of silane on the H/Si(100) surface can result in the formation of structures of different types. The SiH2-fragment can be adsorbed onto atoms of one surface dimer (models 1 and 3) and onto atoms of two neighboring dimers of one dimer row (models 2 and 4).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 354–357
نویسندگان
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