Investigation of structural properties of poly-Si thin films obtained by aluminium induced crystallization in different atmospheres

The structural properties of poly-Si films obtained by aluminium induced crystallization (AIC) in different annealing atmospheres - N2, N2 + H2 and H2 - have been studied by microprobe Raman spectroscopy, optical microscopy and X-ray diffraction spectroscopy (XRD). The Al and amorphous Si films were deposited by magnetron sputtering. The results indicate that the structure of the poly-Si films is improved when the annealing is performed in an atmosphere containing H2. The presence of H2 leads to better structural properties of poly-Si prepared by AIC. It is supposed that H2 stimulates the crystalline grain growth during annealing by increasing the diffusion rates of Al and Si.