کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676257 1518095 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evaluation of barrier height and thickness in tunneling junctions by numerical calculation on tunnel probability
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Evaluation of barrier height and thickness in tunneling junctions by numerical calculation on tunnel probability
چکیده انگلیسی

The barrier height and thickness of Al/AlOx/Al and Co/AlOx/Co tunneling junctions were evaluated from current–voltage (I–V) data by fitting the numerical calculation of tunnel probability. As a calculation model, one-layer and two-layer models of AlOx were assumed. The results of the one-layer model showed a physically unexpected relation between barrier height and thickness. The two-layer model showed no such relation. The results of the two-layer model showed that insulators of Al/AlOx/Al junctions were oxidized more incompletely as oxidation time was increased and insulators of Co/AlOx/Co junctions were oxidized more completely at higher oxidation temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 505, Issues 1–2, 18 May 2006, Pages 67–70
نویسندگان
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