کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676257 | 1518095 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evaluation of barrier height and thickness in tunneling junctions by numerical calculation on tunnel probability
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The barrier height and thickness of Al/AlOx/Al and Co/AlOx/Co tunneling junctions were evaluated from current–voltage (I–V) data by fitting the numerical calculation of tunnel probability. As a calculation model, one-layer and two-layer models of AlOx were assumed. The results of the one-layer model showed a physically unexpected relation between barrier height and thickness. The two-layer model showed no such relation. The results of the two-layer model showed that insulators of Al/AlOx/Al junctions were oxidized more incompletely as oxidation time was increased and insulators of Co/AlOx/Co junctions were oxidized more completely at higher oxidation temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 505, Issues 1–2, 18 May 2006, Pages 67–70
Journal: Thin Solid Films - Volume 505, Issues 1–2, 18 May 2006, Pages 67–70
نویسندگان
N. Arakawa, Y. Otaka, K. Shiiki,