Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer

p-type InP : Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP : Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP : Zn epilayer was found, and single-phased InMnP : Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP : Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 370 K.