کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676295 1008995 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Profile simulation of high aspect ratio contact etch
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Profile simulation of high aspect ratio contact etch
چکیده انگلیسی

A semi-empirical profile simulator was employed to better understand fundamental mechanisms of feature evolution in a high aspect ratio contact plasma etch process. Simulation results showed that the net deposition rate of polymer on sidewall defined the necking and surface scattering of ions from the secondary facet caused the formation of bowing. As neutral depositor flux was increased, the resulting profile showed a monotonic increase in necking. In contrast, the extent of bowing showed a maximum, such that minimal bowing was obtained at low and at high depositor fluxes. Primary faceting of photo resist showed only a small influence on the SiO2 etch profile.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4874–4878
نویسندگان
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