Molecular dynamics simulation analyses on injection angle dependence of SiO2 sputtering yields by fluorocarbon beams

Angular dependence of sputtering yields of SiO2 substrates subject to CF3 beam injections is evaluated with the use of molecular dynamics simulations. The obtained sputtering yield data are in reasonable agreement with experimental observations. Atomic compositions in the SiO2-CF mixing layer as well as kinetic energies and atomic compositions of sputtered species also exhibit strong dependence of the injection angle.