کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676305 1008995 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A novel deep etching technology for Si and quartz materials
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
A novel deep etching technology for Si and quartz materials
چکیده انگلیسی

A disadvantage of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to photo resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4918–4922
نویسندگان
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