کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676315 | 1008995 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition](/preview/png/1676315.png)
چکیده انگلیسی
Hydrogen ions drifting into underlying layers during HDP-CVD were successfully suppressed by the insertion of plasma deposited silicon oxynitride (p-SiOxNyHz) film, and the hydrogen-trapping mechanism was clarified. The hydrogen ions are trapped in bonding states, not in interstitial ones. After HDP-CVD undoped silicate glass (HDP-USG) film deposition on the p-SiOxNyHz film, the decrease of the dangling bonds in the p-SiOxNyHz film measured by ESR was much lower than the increase of the desorbed hydrogen concentration measured by TDS. These results suggest that new hydrogen-trapping sites are mainly generated from ESR-inactive bonds by drifted hydrogen ions and atomic hydrogen during HDP-CVD.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4966–4970
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4966–4970
نویسندگان
T. Murata, T. Yamaguchi, M. Sawada, S. Shimizu, K. Asai, K. Kobayashi, H. Miyatake, M. Yoneda,