کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676320 1008995 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improved crystallization characteristics of ZnO thin film grown onto a-C:H film used as a buffer layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Improved crystallization characteristics of ZnO thin film grown onto a-C:H film used as a buffer layer
چکیده انگلیسی

We employed a-C:H buffer layer to improve the crystalline property of ZnO thin film for the membrane film bulk acoustic resonator (FBAR). The a-C:H film as a buffer layer is prepared by applying dc bias of 200 V and also this sample showed a smoother surface roughness, higher hardness and Young's modulus when compared to the other samples. In addition, the FWHM value was improved from 7.5 to 4.3° on a-C:H film. The fabricated FBAR device showed the resistivity of 0.73 × 108 Ω when compared with no buffer layer and the frequency characteristics of the FBAR were finally confirmed to be 1.15 GHz and 21.24 dB, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4988–4991
نویسندگان
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