کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676320 | 1008995 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved crystallization characteristics of ZnO thin film grown onto a-C:H film used as a buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improved crystallization characteristics of ZnO thin film grown onto a-C:H film used as a buffer layer Improved crystallization characteristics of ZnO thin film grown onto a-C:H film used as a buffer layer](/preview/png/1676320.png)
چکیده انگلیسی
We employed a-C:H buffer layer to improve the crystalline property of ZnO thin film for the membrane film bulk acoustic resonator (FBAR). The a-C:H film as a buffer layer is prepared by applying dc bias of 200 V and also this sample showed a smoother surface roughness, higher hardness and Young's modulus when compared to the other samples. In addition, the FWHM value was improved from 7.5 to 4.3° on a-C:H film. The fabricated FBAR device showed the resistivity of 0.73 × 108 Ω when compared with no buffer layer and the frequency characteristics of the FBAR were finally confirmed to be 1.15 GHz and 21.24 dB, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4988–4991
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4988–4991
نویسندگان
Eung Kwon Kim, Tae Yong Lee, Yong Seob Park, Somnath Ghosh, Byungyou Hong, Young Sung Kim, Joon Tae Song,